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UE Advanced semiconductor devices

Diplômes intégrant cet élément pédagogique :

Descriptif

The first part will give an overview of semiconductor devices trends and evolutions for calculations. Limits of traditional architectures as transistors and memories will be studied. Then we will described emerging solutions for calculations and memories including devices and architectures for advanced computing and artificial intelligence. The second part will address the physics of light emitting diodes.

Part I Semiconductor devices trends and evolutions for calculation

I.1 Moore's law limits and solutions
    MOSFET nano-transistors basics
    Static and dynamic power
    New architectures (Finfet, Nanowires)
    Dynamic power regulation
    Variability at ultimate scaling
I.2 Memories
    Volatile memories
    DRAM
    SRAM
    Non-volatile memories : Flash memories
I.3 Emerging non-volatile memories
     Resistive random access memories (OxRAM, CBRAM, PCRAM)
     Crossbar and 3D architectures
     Magnetic random access memories and spintronics
I.4 3D Technologies for heterogeneous integration
     2D integration limitations
     Parallel 3D
     Sequential 3D
     Applications to advanced calculations, smart imagers, photonics.
 I.5 From CMOS to single electron devices
     New phenomena at ultimate scaling
     Low temperature electronics
     Single electron transistor
     Toward (single) spin electronics and quantum calculations
 I.6 Emerging computing paradigms for AI
     Some basics of neuromorphic computing
     Convolutional neuronal networks
     Spiking neurones using resistive memories
     Fading the limits been memory and calculation.

Part II Light emitting diodes: Physics and devices


II.1 Fundamentals of radiative recombination in semiconductors.
II.2 Homojunction vs heterojunction Light emitting diodes.
II.3 Light emitting diode materials: growth and fabrication techniques.
II.4 Light emitting diode efficiency (injection, extraction).
II.5 Specificity of III-nitride Light emitting diodes (e.g. internal electric field, disorder).

Pré-requis recommandés

For part I:  from M1: Basic principles (documents can be provided)
Diode, MOS Capacitance , MOSFET, Electronic transport in a semiconductor and in and oxide.

for part II: p-n junction, electronic structures, quantum wells.

Informations complémentaires

Lieu(x) : Grenoble
Langue(s) : Anglais